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| smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 BCW89 features low current (max. 100 ma). low voltage (max. 60 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5 v collector current i c -100 ma peak collector current i cm -200 ma peak base current i bm -200 ma total power dissipation p tot 250 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient * r th j-a 500 k/w * transistor mounted on an fr4 printed-circuit board. smd type ic smd type transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i cbo i e =0;v cb =-20v -100 na i cbo i e =0;v cb =-20v;t j =100 -10 a emitter cutoff current i ebo i c =0;v eb = -5 v -100 na i c =-10a;v ce =-5v 90 i c =-2ma;v ce = -5 v 120 260 i c =-10ma;i b = -0.5 ma -80 -300 mv i c =-50ma;i b = -2.5 ma -150 mv i c =-10ma;i b = -0.5 ma -720 mv i c =-50ma;i b = -2.5 ma -810 mv base to emitter voltage v be i c =-2ma;v ce = -5 v -600 -750 mv collector capacitance c c i e =ie=0;v cb = -10 v; f = 1 mhz 4.5 pf transition frequency f t i c =-10ma;v ce =-5v;f=100mhz 100 mhz noise figure nf i c = -200 a; v ce =-5v;r s =2k; f=1khz;b=200hz 10 db collector cutoff current collector-emitter saturation voltage base to emitter saturation voltage v be(sat) v ce(sat) h fe dc current gain marking marking h3 smd type ic smd type transistors BCW89 smd type ic smd type transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123 |
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